Extreme-temperature and harsh-environment electronics :physics, technology and applications /

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Extreme-temperature and harsh-environment electronics :physics, technology and applications /

Khanna, Vinod Kumar, - Personal Name; Institute of Physics (Great Britain), - Personal Name;

"Version: 20230701"--Title page verso.Includes bibliographical references.part I. Environmental hazards and extreme-temperature electronics. Sub-part IA. Environmental hazards. 1. Introduction and overview -- 1.1. Reasons for moving away from normal practices in electronics -- 1.2. Organization of the book -- 1.3. Temperature effects -- 1.4. Harsh environment effects -- 1.5. Discussion and conclusions2. Operating electronics beyond conventional limits -- 2.1. Life-threatening temperature imbalances on Earth and other planets -- 2.2. Temperature disproportions for electronics -- 2.3. High-temperature electronics -- 2.4. Low-temperature electronics -- 2.5. The scope of extreme-temperature and harsh-environment electronics -- 2.6. Discussion and conclusionspart I. Environmental hazards and extreme-temperature electronics. Sub-part IB. Extreme-temperature electronics. 3. Temperature effects on semiconductors -- 3.1. Introduction -- 3.2. The energy bandgap -- 3.3. Intrinsic carrier concentration -- 3.4. Carrier saturation velocity -- 3.5. Electrical conductivity of semiconductors -- 3.6. Free carrier concentration in semiconductors -- 3.7. Incomplete ionization and carrier freeze-out -- 3.8. Different ionization regimes -- 3.9. Mobilities of charge carriers in semiconductors -- 3.10. Equations for mobility variation with temperature -- 3.11. Mobility in MOSFET inversion layers at low temperatures -- 3.12. Carrier lifetime -- 3.13. Wider bandgap semiconductors than silicon -- 3.14. Discussion and conclusions4. Temperature dependence of the electrical characteristics of silicon bipolar devices and circuits -- 4.1. Properties of silicon -- 4.2. Intrinsic temperature of silicon -- 4.3. Recapitulating single-crystal silicon wafer technology -- 4.4. Examining temperature effects on bipolar devices -- 4.5. Bipolar analog circuits in the 25 ?C-300 ?C range -- 4.6. Bipolar digital circuits in the 25 ?C-340 ?C range -- 4.7. Discussion and conclusions5. Temperature dependence of electrical characteristics of silicon MOS devices and circuits -- 5.1. Introduction -- 5.2. Threshold voltage of an n-channel enhancement-mode MOSFET -- 5.3. On-resistance (RDS(ON)) of a double-diffused vertical MOSFET -- 5.4. Transconductance (gm) of a MOSFET -- 5.5. BVDSS and IDSS of a MOSFET -- 5.6. Zero temperature coefficient biasing point of MOSFET -- 5.7. Dynamic response of a MOSFET -- 5.8. MOS analog circuits in the 25 ?C to 300 ?C range -- 5.9. Digital CMOS circuits in -196 ?C to 270 ?C range -- 5.10. Discussion and conclusions6. The influence of temperature on the performance of silicon-germanium heterojunction bipolar transistors -- 6.1. Introduction -- 6.2. HBT fabrication -- 6.3. Current gain and forward transit time of Si/Si1-xGex HBT -- 6.4. Comparison between Si BJT and Si/SiGe HBT -- 6.5. Discussion and conclusions7. The temperature-sustaining capability of gallium arsenide electronics -- 7.1. Introduction -- 7.2. The intrinsic temperature of GaAs -- 7.3. Growth of single-crystal gallium arsenide -- 7.4. Doping of GaAs -- 7.5. Ohmic contacts to GaAs -- 7.6. Schottky contacts to GaAs -- 7.7. Commercial GaAs device evaluation in the 25 ?C-400 ?C temperature range -- 7.8. .Structural innovations for restricting the leakage current of GaAs MESFET up to 300 ?C -- 7.9. Won et al threshold voltage model for a GaAs MESFET -- 7.10. The high-temperature electronic technique for enhancing the performance of MESFETs up to 300 ?C -- 7.11. The operation of GaAs complementary heterojunction FETs from 25 ?C to 500 ?C -- 7.12. GaAs bipolar transistor operation up to 400 ?C -- 7.13. A GaAs-based HBT for applications up to 350 ?C -- 7.14. AlxGaAs1-x/GaAs HBT -- 7.15. GaAs x-ray and beta particle detectors -- 7.16. Discussion and conclusions8. Silicon carbide electronics for hot environments -- 8.1. Impact of silicon carbide devices on power electronics and its superiority over silicon -- 8.2. Intrinsic temperature of silicon carbide -- 8.3. Silicon carbide single-crystal growth -- 8.4. Doping of silicon carbide -- 8.5. Surface oxidation of silicon dioxide -- 8.6. Schottky and ohmic contacts to silicon carbide -- 8.7. SiC p-n diodes -- 8.8. SiC Schottky barrier diodes -- 8.9. SiC JFETs -- 8.10. SiC bipolar junction transistors -- 8.11. SiC MOSFETs -- 8.12. SiC sensors -- 8.13. Discussion and conclusions9. Gallium nitride electronics for very hot environments -- 9.1. Introduction -- 9.2. Intrinsic temperature of gallium nitride -- 9.3. Growth of the GaN epitaxial layer -- 9.4. Doping of GaN -- 9.5. Ohmic contacts to GaN -- 9.6. Schottky contacts to GaN -- 9.7. GaN MESFET model with hyperbolic tangent function -- 9.8. AlGaN/GaN HEMTs -- 9.9. InAlN/GaN HEMTs -- 9.10. GaN sensors -- 9.11. Discussion and conclusions10. Diamond electronics for ultra-hot environments -- 10.1. Introduction -- 10.2. Intrinsic temperature of diamond -- 10.3. Synthesis of diamond -- 10.4. Doping of diamond -- 10.5. A diamond p-n junction diode -- 10.6. Diamond Schottky diode -- 10.7. Diamond bipolar junction transistor operating at < 200 ?C -- 10.8. Diamond metal-semiconductor FET -- 10.9. Diamond JFET -- 10.10. Diamond MISFET -- 10.11. Diamond radiation detectors -- 10.12. Diamond quantum sensors -- 10.13. Discussion and conclusions11. High-temperature passive components, interconnections and packaging -- 11.1. Introduction -- 11.2. High-temperature resistors -- 11.3. High-temperature capacitors -- 11.4. High-temperature magnetic cores and inductors -- 11.5. High-temperature metallization -- 11.6. High-temperature packaging -- 11.7. Discussion and conclusions12. Superconductive electronics for ultra-cool environments -- 12.1. Introduction -- 12.2. Superconductivity basics -- 12.3. Josephson junction -- 12.4. Inverse AC Josephson effect : Shapiro steps -- 12.5. Superconducting quantum interference devices -- 12.6. Rapid single flux quantum logic -- 12.7. Discussion and conclusions13. Superconductor-based microwave circuits operating at liquid-nitrogen temperatures -- 13.1 Introduction -- 13.2. Substrates for microwave circuits -- 13.3. HTS thin-film materials -- 13.4. Fabrication processes for HTS microwave circuits -- 13.5. Design and tuning approaches for HTS filters -- 13.6. Cryogenic packaging -- 13.7. HTS bandpass filters for mobile telecommunications -- 13.8. HTS JJ-based frequency down-converter -- 13.9. Discussion and conclusions14. High-temperature superconductor-based power delivery -- 14.1. Introduction -- 14.2. Conventional electrical power transmission -- 14.3. HTS wires -- 14.4. HTS cable designs -- 14.5. HTS fault current limiters -- 14.6. HTS transformers -- 14.7. Discussion and conclusionspart II. Harsh-environment electronics. Sub-part IIA. General considerations. 15. Humidity and contamination effects on electronics -- 15.1. Introduction -- 15.2. Absolute and relative humidity -- 15.3. Relation between humidity, contamination and corrosion -- 15.4. Metals and alloys used in electronics -- 15.5. Humidity-triggered corrosion mechanisms -- 15.6. Discussion and conclusions16. Moisture and waterproof electronics -- 16.1. Introduction -- 16.2. Corrosion prevention by design -- 16.3. Parylene coatings -- 16.4. Superhydrophobic coatings -- 16.5. Volatile corrosion inhibitor coatings -- 16.6. Silicones -- 16.7. Discussion and conclusions17. Preventing chemical corrosion in electronics -- 17.1. Introduction -- 17.2. Sulfidic and oxidation corrosion from environmental gases -- 17.3. Electrolytic ion migration and galvanic coupling -- 17.4. Internal corrosion of integrated and printed circuit board circuits -- 17.5. Fretting corrosion -- 17.6. Tin whisker growth -- 17.7. Minimizing corrosion risks -- 17.8. Further protection methods -- 17.9. Hermetic packaging -- 17.10. Hermetic glass passivation of discrete high-voltage diodes, transistors and thyristors -- 17.11. Discussion and conclusions18. Radiation effects on electronics -- 18.1. Introduction -- 18.2. Sources of radiation -- 18.4. Total dose effects -- 18.5. Single-event effects -- 18.6. Discussion and conclusions19. Radiation-hardened electronics -- 19.1. The meaning of 'radiation hardening' -- 19.2. Radiation hardening by process (RHBP) -- 19.3. Radiation hardening by design -- 19.4. Discussion and conclusions20. Vibration-tolerant electronics -- 20.1. Vibration is omnipresent -- 20.2. Random and sinusoidal vibrations -- 20.3. Countering vibration effects -- 20.4. Passive and active vibration isolators -- 20.5. Theory of passive vibration isolation -- 20.6. Mechanical spring vibration isolators -- 20.7. Air-spring vibration isolators -- 20.8. Wire-rope isolators -- 20.9. Elastomeric isolators -- 20.10. Negative stiffness isolators -- 20.11. Active vibration isolators -- 20.12. Discussion and conclusionspart II. Harsh-environment electronics. Sub-part IIB. Application-specific robust electronics techniques -- 21. Making electronics compatible with electromagnetic interference environments -- 21.1. Electromagnetic interference -- 21.2. Electromagnetic compatibility -- 21.3. Classification of EMI -- 21.4. Effects of EMI -- 21.5. Single-ended and differential transmission of signals -- 21.6. Differential- and common-mode voltages -- 21.7. Differential-mode interference -- 21.8. Common-mode interference -- 21.9. Twisted pair cable for common-mode EMI noise rejection -- 21.10. Common-mode interference from common impedance coupling -- 21.11. Combined EMI noise -- 21.12. Filters for EMI noise suppression -- 21.13. Grounding -- 21.14. Grounding approaches -- 21.15. EMI shielding -- 21.16. Grounding of shielded cables -- 21.17. Discussion and conclusions22. Developing sensor capabilities for aggressive environments -- 22.1. Disorganized scenario in a harsh environment, and denial of accessibility to the sensor -- 22.2. High-temperature sensors -- 22.3. Need of tightly monitoring energy systems aggravates burden on sensors -- 22.4. Accelerometers -- 22.5. Flow sensors -- 22.6. Pressure sensors -- 22.7. Temperature sensors -- 22.8. Humidity sensors -- 22.9. Gas sensors -- 22.10. Discussions and conclusions23. Adapting medical implant electronics to human biological environments -- 23.1. Environment inside the human body -- 23.2. Essential properties of packaging materials for reliable functioning of implanted medical electronic devices -- 23.3. Studying biological response vis-?a-vis material properties -- 23.4. Foreign body reaction to implanted biomaterials -- 23.5. Biomaterials for implants -- 23.6. Metallic biomaterials -- 23.7. Ceramic biomaterials -- 23.8. Polymeric biomaterials -- 23.9. Composite biomaterials -- 23.10. Implantable microelectrode arrays for neuroprosthetics -- 23.11. Optrode array with integrated LEDs -- 23.12. Operation of an implanted electronics device enclosed in a soft polymer covering -- 23.13. Anti-foreign body reaction (FBR) techniques for domestication/mitigation of FBR to implants -- 23.14. Sensors working in biological environments -- 23.15. Discussion and conclusions24. Meeting the challenges faced by electronics in unfavorable space environments -- 24.1. The challenge of vibrations and shocks -- 24.2. The challenge of temperature excursions beyond safe limits -- 24.3. The challenge of electrical charging of spacecraft -- 24.4. The challenge of tin whisker growth -- 24.5. The challenge of erosion of spacecraft materials by atomic oxygen -- 24.6. The challenge of radiation showers -- 24.7. The challenge of outgassing in vacuum environment of space -- 24.8. Discussion and conclusions25. Electronics jamming counteraction and cybersecurity assurance in adversary environments -- 25.1. A jamming attack -- 25.2. Types of jamming and jammers -- 25.3. Detection of jamming attacks -- 25.4. Mapping out jammed area and planning the defense strategy against jamming -- 25.5. Approaches to overcome jamming -- 25.6. Retreating methods -- 25.7. Competition method : regulation of transmitted power and error correcting code -- 25.8. Jamming-resistant spread-spectrum communication systems -- 25.9. Ethical hacking -- 25.10. Malware (malicious software) -- 25.11. Hacking threats and attacks -- 25.12. Defences against hacking -- 25.13. Discussion and conclusions.Electronic devices and circuits are employed by a range of industries in unfriendly conditions, such as exposure to extreme temperatures, humidity, or radiation. This second edition describes the diverse measures needed to make electronics capable of coping with such situations and exploiting any new phenomena that take place under these specific conditions. The book explains the need for operating electronics beyond conventional limits in applications such as aerospace and automotive engineering. It explores GaAs, SiC, GaN and diamond electronics, superconductive electronics, superconductor-based power delivery; moisture-proof, chemical-corrosion-resistant, radiation hardened and vibration-tolerant electronics; it also covers the prevention of electromagnetic interference, the operation of sensors in hostile conditions, and jamming and hacking mitigation techniques. The book provides up-to-date coverage of the topics for students, academics and industrial researchers as well as professional experts.Researchers, postgraduate students and practising engineers working with electronic devices and circuits under extreme temperatures and harsh-environments, including the automotive, avionics, oil and nuclear power industries.Also available in print.Mode of access: World Wide Web.System requirements: Adobe Acrobat Reader, EPUB reader, or Kindle reader.Dr. Vinod Kumar Khanna is an independent researcher at Chandigarh, India. He is a former emeritus scientist at the Council of Scientific & Industrial Research (CSIR) and emeritus professor at the Academy of Scientific & Innovative Research (AcSIR), India. He is a retired chief scientist, Head of MEMS & Microsensors Group and Professor of AcSIR at the CSIR-Central Electronics Engineering Research Institute, Pilani, India. He has authored 19 books and six chapters in edited books, published 194 research papers in prestigious research journals and conference proceedings, and has five patents to his credit.Title from PDF title page (viewed on August 1, 2023).

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Series Title: -
Call Number: -
Publisher: : .,
Collation: 1 online resource (various pagings) :illustrations (some color).
Language: English
ISBN/ISSN: 9780750350723
Classification: 621.381
Content Type: -
Media Type: -
Carrier Type: -
Edition: Second edition.
Subject(s): Electronic devices & materials.
Electronic apparatus and appliances
TECHNOLOGY & ENGINEERING / Electronics / General.
Extreme environments.
Cryoelectronics.
Heat resistant materials.
Specific Detail Info: -
Statement of Responsibility: Vinod Kumar Khanna.

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