Black silicon :technology, opportunities and challenges /
"Version: 20250701"--Title page verso.Includes bibliographical references.1. Silicon--evolution -- 1.1. Introduction -- 1.2. Physical properties -- 1.3. Chemical properties -- 1.4. Electronic properties -- 1.5. Thermal properties -- 1.6. Mechanical properties -- 1.7. Scaling--present trends -- 1.8. Summary2. Silicon--types -- 2.1. Introduction -- 2.2. Crystalline silicon -- 2.3. Amorphous silicon -- 2.4. Microcrystalline silicon -- 2.5. Nanocrystalline silicon -- 2.6. Porous silicon -- 2.7. Summary3. Black silicon -- 3.1. Introduction -- 3.2. Surface texturing -- 3.3. Modeling -- 3.4. Summary4. Methods of processing -- 4.1. Introduction -- 4.2. Wet etching -- 4.3. Dry etching -- 4.4. Laser-assisted methods -- 4.5. Summary5. Thermal properties of black silicon -- 5.1. Introduction -- 5.2. Fundamentals -- 5.3. Infrared absorption and heat dissipation -- 5.4. Temperature-dependent photoluminescence -- 5.5. Applications -- 5.6. Emerging innovations and future prospects6. Electronic properties -- 6.1. Introduction -- 6.2. Fundamentals -- 6.3. Lifetime and surface recombination velocity -- 6.4. Band structure and density of states -- 6.5. Applications and impact on device performance -- 6.6. Summary7. Optical properties -- 7.1. Introduction -- 7.2. Fundamentals of optical properties -- 7.3. Influence of structure on optical properties -- 7.4. Computational methods for simulation of optical properties -- 7.5. Photoluminescence in BSi -- 7.6. Applications of black silicon -- 7.7. Summary8. Electrical properties -- 8.1. Introduction -- 8.2. Recombination mechanisms -- 8.3. Charge carrier dynamics -- 8.4. Characterization techniques -- 8.5. Passivation -- 8.6. Applications in optoelectronics -- 8.7. Summary9. Material and device applications -- 9.1. Introduction -- 9.2. Applications -- 9.3. Historic perspective -- 9.4. Patents/invention disclosures -- 9.5. Summary10. Summary--R&D, products, and opportunities -- 10.1. Introduction -- 10.2. Examples of R&D, products, and opportunities -- 10.3. Conclusions.Full-text restricted to subscribers or individual document purchasers.This book explores the fundamentals, process-property relationships, and manufacturing techniques of black silicon. It details various surface morphing methods and compares the resulting structures. The thermal, electrical, electronic, and optical properties of black silicon are examined, along with its major applications. Future directions in research, development, and device manufacturing are discussed. The ability to tailor semiconductor morphology for desired properties adds a new dimension to the physics, materials science, and engineering of these materials. The book also includes a comprehensive summary of intellectual property related to black silicon, highlighting its technological evolution and potential.Universities, national labs, commercial and industry engineers and companies.Also available in print.System requirements: Adobe Acrobat Reader, EPUB reader, or Kindle reader.Mode of access: World Wide Web.Nuggehalli M. Ravindra (Ravi) is a physics professor at NJIT, where he previously served as Chair of Physics and Director of the Materials Science & Engineering program. He is the founding editor-in-chief of Emerging Materials Research and has guest-edited journals such as Polymers Advanced Technologies, Journal of Electronic Materials, Metallurgical and Materials Transactions A, and JOM. Dr. Priyanka Singh has been associated with the National Physical Laboratory, New Delhi, India. She has previously worked as a Research Scientist, with N M Ravindra, at Department of Physics at New Jersey Institute of Technology (NJIT). She is a coauthor of more than 13 papers in the field of solar cells and semiconductors.Title from PDF title page (viewed on August 1, 2025).
No copy data
No other version available