Mott insulators :physics and applications /

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"Version: 20190701"--Title page verso.Includes bibliographical references.part I. Physics of Mott insulators. 1 Electrons in crystalline solids -- 1.1 Periodic structure of solids and Bragg scattering -- 1.2 The direct lattice and the reciprocal lattice -- 1.3 Metallic solid : a container of free electron gas -- 1.4 Electron waves in the periodic ionic-potential of a solid : Bloch's theorem -- 1.5 Independent electron approximation and electronic band structure -- 1.6 Nearly free electron model versus tight binding model -- 1.7 Quantum chemistry and electron theory of solids -- 1.8 Methods for calculating electron band structure -- 1.9 Metals, insulators and semiconductors -- 1.10 Peierls transition and charge density wave -- 1.11 Effects of static disorder : Anderson localization2 Electron-electron interaction in crystalline solids -- 2.1 Electron-electron interaction in metals : Hartree-Fock theory -- 2.2 Hartree-Fock theory of free electrons -- 2.3 Exchange hole, correlation hole and pair distribution function -- 2.4 Exchange energy and correlation energy in the electron gas -- 2.5 Screening in the electron gas -- 2.6 Hartree-Fock-Slater method and density functional theory -- 2.7 Fermi liquid theory in metals -- 2.8 Slater insulator3 Mott insulators and related phenomena : a basic introduction -- 3.1 Localized framework of solid state -- 3.2 Interacting electron gas : Wigner crystallization and Mott insulating state -- 3.3 Mott insulator : towards a formal definition -- 3.4 Pair distribution function and magnetic moments -- 3.5 Mott-Hubbard insulator -- 3.6 Theoretical approaches in Mott physics -- 3.7 Mott-Heisenberg insulator -- 3.8 Multi-band Mott insulator -- 3.9 Charge transfer insulator -- 3.10 Comparison between band-insulator, Mott-insulator and charge transfer insulator -- 3.11 Mott-Anderson insulator -- 3.12 Relativistic Mott insulator -- 3.13 Excitonic insulator4 Mott physics and magnetic insulators -- 4.1 Anderson superexchange and magnetic insulators -- 4.2 Case studies of antiferromagnetic insulators : manganese monoxide and nickel monoxide -- 4.3 Double exchange mechanism in mixed-valence systems La1-xSrxMnO3 and Fe3O4 -- 4.4 Nuclear fuel materials : uranium dioxide and plutonium -- 4.5 Mott physics of molecular solid oxygen -- 4.6 Interesting case of copper sulphate pentahydrate5 Mott metal-insulator transition -- 5.1 Bandwidth-control and filling-control Mott transition -- 5.2 Theoretical approaches in Mott metal-insulator transition6 Experimental studies on Mott metal-insulator transition -- 6.1 Temperature induced and bandwidth control Mott metal-insulator transition -- 6.2 Filling control Mott metal-insulator transition -- 6.3 Systems with additional degrees of freedom beyond strong electron correlation -- 6.4 VO2 and NbO2 : Peierls insulators or Mott insulators? -- 6.5 Sr2IrO4 and Sr3Ru2O7 : Mott insulators or Slater insulators? -- 6.6 Mott insulating state in semiconductor surfacespart II. Applications of Mott insulators. 7 Electron band semiconductor devices -- 7.1 Physics of intrinsic and extrinsic semiconductors -- 7.2 Building blocks for semiconductor device -- 7.3 A brief history of major semiconductor devices and technologies -- 7.4 Single-junction semiconductor devices -- 7.5 Bipolar transistor -- 7.6 Metal-oxide-semiconductor field-effect transistor (MOSFET) and CMOS technology -- 7.7 Beyond logic and memory : opto-electronic devices -- 7.8 Scaling of MOSFET -- 7.9 Limit of existing semiconductor technologies -- 7.10 Beyond CMOS technology8 Mott insulator and strongly correlated electron materials based devices -- 8.1 Mott metal-insulator transition : phase-coexistence and hysteresis -- 8.2 Mott devices and mechanism of operation -- 8.3 Theoretical models of resistive switching -- 8.4 Experimental situation on Mott devicesAppendices. A. Some relevant experimental techniques -- B. Fermi-Dirac distribution function -- C. Idea of second quantization -- D. Green's function and Hubbard model.There have been many recent developments in the physics and materials science of Mott insulators, especially their recognition as emergent materials for important and innovative device applications such as information processing and storage, and the possibilities of even further applications in optical and thermal switches, thermo-chromic devices, gas sensors and even solar cell applications. Aimed at advanced undergraduate students of physics, chemistry, materials science, and electrical and electronics engineering, this book introduces the subject and reviews present knowledge in the field, enabling students and researchers to get acquainted with this very interesting and emerging area of science and technology. Professional researchers in academic institutions and industries already engaged in the programmes of correlated electron materials and devices will also find this title of use.Advanced undergraduate and graduate students of physics, chemistry, materials science and electrical & electronics engineering.Also available in print.Mode of access: World Wide Web.System requirements: Adobe Acrobat Reader, EPUB reader, or Kindle reader.Sindhunil Barman Roy is an emeritus professor at the UGC-DAE Consortium for Scientific Research, Indore. His research interests span basic and applied aspects of magnetism and superconductivity, and he has published more than 200 research papers in international peer-reviewed journals. He served on the editorial board of Superconductor Science and Technology between 2008 and 2014 and is a recipient of the Homi Bhabha Science and Technology Award of the Department of Atomic Energy, India, as well as a fellow of the Institute of Physics, UK.Title from PDF title page (viewed on August 15, 2019).

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: .,

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1 online resource (various pagings) :illustrations (chiefly color).

Language

English

ISBN/ISSN

9780750315968

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546/.6

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Subject(s)

Electronic structure.
Electronic devices & materials.
Hubbard model.
Metal-insulator transitions.

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Sindhunil Barman Roy.

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