Flexible electronics.
"Version: 20190701"--Title page verso.Includes bibliographical references.1. The flexible electronics paradigm -- 1.1. Introduction -- 1.2. Traditional versus flexible electronics -- 1.3. Three-pronged approach to flexible electronics -- 1.4. Defining flexible electronics -- 1.5. Broad scope of flexible electronics -- 1.6. Organization of the book -- 1.7. Discussion and conclusionspart I. Mechanical background. 2. Mechanical bending of a circuit -- 2.1. Introduction -- 2.2. Bending-mode deformation -- 2.3. Curvature and radius of curvature -- 2.4. Neutral axis -- 2.5. Critical strain and critical radius of curvature -- 2.6. [epsilon]Critical and [rho]Critical as characteristic parameters defining flexible, compliant and stretchable electronics -- 2.7. Discussion and conclusions3. Stresses and strains in the hard-film-soft-substrate structure -- 3.1. Introduction -- 3.2. Stresses in thin films -- 3.3. Built-in residual stress -- 3.4. Tensile versus compressive built-in stress in a film-on-foil structure in flexible electronics -- 3.5. Thermal coefficient mismatch stress -- 3.6. Mechanical stress and strain at different stages in a film-on-foil structure -- 3.7. Modeling the film-on-foil structure -- 3.8. Applications of the model -- 3.9. Discussion and conclusions4. Curvature and overlay alignment of the hard-film-soft-substrate structure -- 4.1. Introduction -- 4.2. Classical theory of curvature produced by thin film deposition -- 4.3. Evolution of spherical shape from the dominance of the substrate effect -- 4.4. Radius of curvature of cylindrical roll contour for a compliant substrate -- 4.5. Discussion and conclusions5. Providing stretchability by controlled buckling of films -- 5.1. Introduction -- 5.2. Spontaneously produced ordered structures -- 5.3. Using ordered structures in stretchable electronics -- 5.4. Process of formation of activated/inactivated sites -- 5.5. The buckling profile -- 5.6. Approach and assumptions in the formulation of buckling geometry model -- 5.7. Bending energy Ub in thin film -- 5.8. Membrane strain ([epsilon]11) -- 5.9. In-plane displacement u1 -- 5.10. Modifying the strain equation -- 5.11. Membrane energy in the thin film (Um) -- 5.12. Substrate energy (Us) -- 5.13. Total energy (U) -- 5.14. Amplitude and critical strain -- 5.15. Independence of amplitude from thin film properties -- 5.16. Maximum strain -- 5.17. Environmental protection of buckled thin film in a practical application -- 5.18. Substrate effects -- 5.19. Discussion and conclusions6. Bending brittle films -- 6.1. Introduction -- 6.2. Failure by cracking, slipping and delamination -- 6.3. Surface strain, interfacial shear stress and interfacial normal (or peeling) stress -- 6.4. Applying self-equilibrium beam theory for trilayer electronic assemblies -- 6.5. Analyzing a structure with a slipping crack on the interface between Si thin film and PET substrate -- 6.6. Fracture toughness and delamination toughness of brittle thin films on compliant substrates by controlled buckling experiments -- 6.7. Building self-healing capabilities in circuits -- 6.8. Discussion and conclusions7. Deformation and cycling of ductile films -- 7.1. Introduction -- 7.2. In situ fragmentation testing of copper films -- 7.3. Cyclic bending of copper films -- 7.4. Discussion and conclusions8. Straining permeation barriers -- 8.1. Introduction -- 8.2. The electromechanical two-point bending equipment -- 8.3. The [delta]R/R0 ratio-strain curve for the film -- 8.4. Internal compressive strain in the film -- 8.5. Controlling internal compressive strain in a film -- 8.6. Inorganic-organic multilayer permeation barrier -- 8.7. Failure mechanisms of inorganic/organic coatings -- 8.8. Discussion and conclusionspart II. Materials. 9. Inorganic materials -- 9.1. What are inorganic materials? -- 9.2. Amorphous silicon films -- 9.3. Hydrogen-terminated amorphous silicon (a-Si:H) films -- 9.4. Nanocrystalline (nc), microcrystalline ([mu]c) and polycrystalline (pc) silicon films -- 9.5. Solution-processed a-Si and pc-Si films -- 9.6. Transparent oxides -- 9.7. Zinc oxide-based binary and ternary oxides -- 9.8. High dielectric constant materials -- 9.9. Discussion and conclusions10. Organic materials -- 10.1. What are organic materials? -- 10.2. Mechanisms of electrical behavior of organic compounds -- 10.3. Dielectric materials -- 10.4. Semiconducting materials -- 10.5. Organic conductors -- 10.6. Discussion and conclusions11. Nanomaterials : CNTs, nanowires, graphene and 2D materials -- 11.1. What is a nanomaterial? -- 11.2. Two approaches to nanomaterial film growth/deposition on flexible substrates -- 11.3. Direct CNT growth on PI -- 11.4. Direct Si NW growth on PI -- 11.5. Direct graphene pattern growth on flexible glass substrate -- 11.6. Direct low-temperature synthesis of MoS2 on PI substrate -- 11.7. CNT film transfer to any substrate -- 11.8. Microwave-assisted V-CNT array patterning on PC substrate -- 11.9. Transfer printing of silicon NWs to PDMS -- 11.10. PMMA-mediated graphene transfer to non-specific substrates -- 11.11. Graphene transfer to PET substrate via hot-press lamination (HPL) and ultraviolet adhesive (UVA) -- 11.12. Transfer of MoS2 devices to PI foil -- 11.13. Discussion and conclusionspart III. Manufacturing equipment and machines. 12. Printing techniques -- 12.1. What is printing? -- 12.2. Classification of printing technologies (I) : subtractive versus additive -- 12.3. Classification of printing technologies (II) : contact versus non-contact -- 12.4. Gravure printing -- 12.5. Gravure offset printing -- 12.6. Flexographic printing -- 12.7. Lithographic printing -- 12.8. Offset lithographic printing -- 12.9. Screen printing -- 12.10. Inkjet printing -- 12.11. Electrohydrodynamic printing -- 12.12. Pyroelectrodynamic printing -- 12.13. Dielectrophoretic printing -- 12.14. Surface acoustic wave (SAW) printing -- 12.15. Discussion and conclusions13. Vacuum deposition -- 13.1. What is vacuum deposition? -- 13.2. Vacuum evaporation -- 13.3. Sputtering -- 13.4. Molecular beam epitaxy (MBE) -- 13.5. Organic molecular beam deposition (OMBD) -- 13.6. Organic vapor phase deposition (OVPD) -- 13.7. Chemical vapor deposition (CVD) -- 13.8. Discussion and conclusions14. Silicon microelectronics/MEMS processes -- 14.1. Introduction -- 14.2. Thermal oxidation of silicon -- 14.3. Thermal diffusion of impurities into silicon -- 14.4. Ion implantation -- 14.5. Photolithography (deep UV or optical lithography) and etching -- 14.6. Electron-beam (e-beam) lithography -- 14.7. Discussion and conclusions15. Packaging -- 15.1. Electronic packaging or encapsulation -- 15.2. Ultra-thin chip-in flex technology -- 15.3. Flip-chip assembly of ultra-thin silicon chips on flexible substrates -- 15.4. High-yield manufacturing process for flip-chip assembly of 25 [mu]m thick silicon dies on polyimide substrates -- 15.5. Laser-enabled advanced packaging (LEAP) -- 15.6. Thermo-mechanical selective laser-assisted die transfer (tmSLADT) method -- 15.7. Discussion and conclusions.Flexible electronics is a fast-emerging field with the potential for huge industrial importance. Comprising three volumes, this work offers a cohesive, coherent and comprehensive overview of the field. Themes covered include mechanical theory, materials science aspects, fabrication technologies, devices, and applications.Graduate students, researchers, some industry.Also available in print.Mode of access: World Wide Web.System requirements: Adobe Acrobat Reader, EPUB reader, or Kindle reader.Vinod Kumar Khanna is a former Emeritus Scientist at CSIR-Central Electronics Engineering Research Institute, Pilani, India, and Emeritus Professor at the Academy of Scientific & Innovative Research, India. He is a retired Chief Scientist and Head of the MEMS & Microsensors Group, CSIR-CEERI, Pilani.Title from PDF title page (viewed on August 15, 2019).
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