Radiative properties of semiconductors /

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"Version: 20170801"--Title page verso."A Morgan & Claypool publication as part of IOP Concise Physics"--Title page verso.Includes bibliographical references.Preface -- Foreword -- 1. Introduction to radiative properties -- 1.1. Introduction -- 1.2. Properties2. Optical and thermal properties -- 2.1. Optical properties3. Instrumentation -- 3.1. Spectral emissometer -- 3.2. Czochralski crystal puller -- 3.3. Polarized radiometer -- 3.4. Rotating polarizer ellipsometer4. Silicon -- 4.1. Influence of coatings on emissivity5. Germanium -- 6. Graphene -- 7. Silicon carbide -- 8. Gallium arsenide -- 9. Gallium nitride -- 10. Indium antimonide -- 11. Indium phosphide -- 12. Cadmium telluride -- 13. Mercury cadmium telluride -- 14. Modeling15. Applications -- 15.1. Silicon -- 15.2. Germanium -- 15.3. Graphene -- 15.4. Silicon carbide -- 15.5. Gallium arsenide -- 15.6. Gallium nitride -- 15.7. Indium antimonide -- 15.8. Indium phosphide -- 15.9. Cadmium tellurid -- 15.10. Mercury cadmium telluride16. Global infrastructure for emissivity measurements--examples -- 16.1. NIST -- 16.2. NPL -- 16.3. Shimadzu -- 16.4. NREL.Optical properties, particularly in the infrared range of wavelengths, continue to be of enormous interest to both material scientists and device engineers. The need for the development of standards for data of optical properties in the infrared range of wavelengths is very timely considering the on-going transition of nano-technology from fundamental R&D to manufacturing. The recent progress in two-dimensional materials is an example of this evolution in materials science and engineering. Radiative properties play a critical role in the processing, process control and manufacturing of semiconductor materials, devices, circuits and systems. The design and implementation of real-time, non-contact process monitoring and control methods in manufacturing, such as multi-wavelength imaging pyrometry, spectroscopic ellipsometry and reflectometry, require the knowledge of the radiative properties of materials. The design and manufacturing of sensors, imagers, waveguides, filters, antireflection coatings and lenses, operating in the infrared range of wavelengths, requires a reliable database of the radiative properties of materials. This book reviews the optical properties of various semiconductors in the infrared range of wavelengths. Some fundamental and experimental studies of the radiative properties of semiconductors are presented. Previous studies, potential applications and future developments are outlined. In chapter 1, an introduction to the radiative properties is presented. A brief overview of the optical and thermal properties is presented in chapter 2. Examples of the instrumentation for the measurements of the radiative properties are described in chapter 3. In chapters 4-13, case studies of the radiative properties of several semiconductors are elucidated. The modeling and applications of these properties are explained in chapters 14 and 15, respectively. In chapter 16, examples of the global infrastructure for these measurements are illustrated.While the book is of importance to scientists and engineers in the areas of photonics/optoelectronics/optics/devices/materials/energy conversion/optical coatings/manufacturing, it is very helpful to folks in the military/DOD areas.Also available in print.Mode of access: World Wide Web.System requirements: Adobe Acrobat Reader, EPUB reader. or Kindle reader.N.M. Ravindra (Ravi) is Professor of Physics at the New Jersey Institute of Technology (NJIT). He was the Chair of the Physics Department (2009-13) and Director, Interdisciplinary Program in Materials Science and Engineering at NJIT (2009-2016). Ravi is the Editor-in-Chief of Emerging Materials Research [http://www.icevirtuallibrary.com/content/serial/emr]. He is Series Editor of Emerging Materials: Processing, Performance and Applications, Momentum Press [http://www.momentumpress.net/]. He has been a frequent Guest Editor of JEM, the Journal of Electronic Materials [http://www.tms.org/pubs/journals/JEM/jem.aspx]; JOM [http://www.tms.org/pubs/journals/JOM/JOMhome.aspx]. He serves on the editorial board of several international journals and book series that are dedicated to materials science and engineering. Before joining NJIT in 1987, Ravi had been associated with Vanderbilt University, the Microelectronics Center of North Carolina (MCNC), North Carolina State University, International Center for Theoretical Physics (ICTP-Trieste), Politecnico di Torino, CNRS associated labs in Paris and Montpellier. Ravi holds a PhD in Physics from Indian Institute of Technology (Roorkee, India), MS and BS in Physics from Bangalore University, India. Ravi and his research team have published over 300 papers in international journals, books and conference proceedings; his team has several pending and two issued patents; he has organized over 30 international conferences; and he has given over 75 talks in international meetings. His research activities have been sponsored by agencies including the US Department of Defense (DOD), Defense Advanced Research Projects Agency (DARPA), SEMATECH, Semiconductor Research Corporation, US Department of Energy/National Renewable Energy Laboratory (DOE/NREL), US Department of Education, National Aeronautics & Space Administration (NASA), US Army Research Office, US Air Force of Scientific Research, New Jersey Commission on Science and Technology and the National Science Foundation. Ravi's research interests include education, energy, health, materials, manufacturing and the physics of sports. He has been a frequent keynote speaker in several international conferences and has won several awards in the US and abroad. Ravi is the co-editor of Transient Thermal Processing Techniques in Electronic Materials (TMS--The Minerals, Metals, Materials Society, 1999); he is the co-author of Black Silicon--Processing, Properties & Applications (Momentum Press, 2016). Sita Rajyalaxmi Marthi (Laxmi) received a BSc in Physics and MSc in Applied Physics from Osmania University, Hyderabad, India, in 2006 and 2009 respectively. Laxmi is currently pursuing a PhD in Materials Science & Engineering at the New Jersey Institute of Technology. Her research interests are related to the optical properties of black silicon, related materials and device structures. Laxmi is a co-author of Black Silicon--Processing, Properties & Applications (Momentum Press, 2016). Asahel Ba?nobre received his BS and MS in Applied Physics with Honors from the New Jersey Institute of Technology (NJIT) in 2003 and 2006, respectively. From 2005 to 2015, Asahel worked as a Test Engineer at Kulite Semiconductor Inc., where he contributed to the optimization and automation of device test procedures and the development of custom product prototypes. Currently, he is pursuing his PhD in Materials Science and Engineering at NJIT. His doctoral study focuses on the design, modeling, fabrication and characterization of uncooled infrared microbolometers. His research interests include semiconductors, MEMS integrated sensors and transducers such as pressure and temperature sensors, and infrared detectors.Title from PDF title page (viewed on September 22, 2017).

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: .,

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1 online resource (various pagings) :illustrations (some color).

Language

English

ISBN/ISSN

9781681741123

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537.6/22

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Subject(s)

Semiconductors
Electronics & communications engineering.

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N.M. Ravindra, Sita Rajyalaxmi Marthi, Asahel Ba?nobre.

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